| Specifications | |
| Product Attribute | Attribute Value |
| Manufacturer Product Number | PDTC123ET,215 |
| Manufacturer | Nexperia |
| Category | Discrete Semiconductor Products, Transistors, Bipolar (BJT), Single, Pre-Biased Bipolar Transistors |
| Base Product Number | PDTC123 |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| Power - Max | 250 mW |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB |
