| Specifications | |
| Product Attribute | Attribute Value |
| Manufacturer Product Number | PBSS4160DS,115 |
| Manufacturer | Nexperia |
| Category | Discrete Semiconductor Products, Transistors, Bipolar (BJT), Bipolar Transistor Arrays |
| Base Product Number | PBSS4160 |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Power - Max | 420mW |
| Frequency - Transition | 220MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | 6-TSOP |
