| Specifications | |
| Product Attribute | Attribute Value |
| Manufacturer Product Number | BC857QASZ |
| Manufacturer | Nexperia |
| Category | Discrete Semiconductor Products, Transistors, Bipolar (BJT), Bipolar Transistor Arrays |
| Base Product Number | BC857 |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2mA, 5V |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad |
| Supplier Device Package | DFN1010B-6 |
